ups1040cte3 10 a dual schottk y barrier rectifiers description this ups1040cte3 in the powermite3 ? package is a high efficiency center- tap dual schottky rectifier that is also rohs compliant offering high current/power capabilities previously found only in much larger packages. they are ideal for smd applications that operate at high frequencies. in addition to its size advantages, the powermite3 ? package includes a full metallic bottom that eliminates the po ssibility of solder flux entrapment during assembly and a unique locking tab act as an efficient heat path to the heat-sink mounting. its innovative des ign makes this device ideal for use with automatic insertion equipment. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com absolute maximum ratings at 25o c (unless otherwise specified) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v rms reverse voltage v r (rms) 28 v average rectified output current i o 10 a non-repetitive peak forward surge current 8.3ms single half sine wave superimposed on rated load@ t c =90 oc i fsm 150 a storage temperature t stg -55 to +150 oc junction temperature t j -55 to +125 oc thermal characteristics (unless otherwise specified) thermal resistance (dual device) junctions-to bottom (case) r jc 2.5 oc/watt key features ? very low thermal resistance package ? dual center-tap schottky configuration with common cathode ? rohs compliant with e3 suffix part number ? guard-ring-die construction for transient protection ? efficient heat path with integral locking bottom metal tab ? low forward voltage ? full metallic bottom elim inates flux entrapment ? compatible with automatic insertion ? low profile-maximum height of 1mm ? options for screening in accordance with mil- prf-19500 for jan, jantx, jantxv, and jans are available by adding mq, mx, mv, or msp prefixes respectively to part numbers. for example, designate mxups1040cte3 for a jantx (consult factory for tin-lead plating). ? optional 100% avionics screening available by adding ma prefix for 100% temperature cycle, thermal impedance and 24 hours htrb (consult factory for tin-lead plating) applicati ons/benefits ? switching and regulating power supplies. ? silicon schottky (hot carrier) rectifier for minimal reverse voltage recovery ? elimination of reverse-recovery oscillations to reduce need for emi filtering ? charge pump circuits ? reduces reverse recove ry loss with low i rm ? small foot print 190 x 270 mils (1:1 actual size) see mounting pad details on pg 5 mechanical & packaging ? case: void-free transfer molded thermosetting epoxy compound meeting ul94v-0 ? finish: annealed matte-tin plating over copper and readily solderable per mil-std- 750 method 2026 (consult factory for tin-lead plating) ? polarity: see figure (left) ? marking: s1040ct? ? weight: 0.072 gram (approx.) ? package dimension on last page ? tape & reel option: 16 mm tape per standard eia-481-b, 5000 on 13? reel www. microsemi . com u u p p s s 1 1 0 0 4 4 0 0 c c t t e e 3 3 microsemi copyright ? 2005 5/17/2005 rev b page 1
ups1040cte3 10 a dual schottk y barrier rectifiers www. microsemi . com electrical parameters @ 25 c (unless otherwise specified) parameter symbol conditions min typ. max units forward voltage (note 1) per element v f i f = 5 a , t j =25 oc i f = 5 a , t j =100 oc i f = 10 a , t j =25 oc i f = 10 a , t j =100 oc 0.44 0.39 0.51 0.50 0.48 0.42 0.57 0.55 v 40 reverse breakdown voltage (note 1) v br i r = 500 ua v microsemi copyright ? 2005 5/17/2005 rev b u u p p s s 1 1 0 0 4 4 0 0 c c t t e e 3 3 note: 1 short duration test pulse used to minimize self-heating effect graphs reverse current (note1) per element i r v r = 35v, t j = 25 oc v r = 35v, t j =100 oc v r = 17.5v, t j = 25 oc v r = 17.5v, t j = 100 oc 35 4 15 2 150 10 80 5 ua ma ua ma capacitance per element c t v r = 4 v; f = 1 mh z 375 pf page 2
ups1040cte3 10 a dual schottk y barrier rectifiers www. microsemi . com . u u p p s s 1 1 0 0 4 4 0 0 c c t t e e 3 3 note 1: t a = t c at case bottom where r jc =2.5o c/w (dual device) and r ca = 0o c/w (infinite heat sink). note 2: device mounted on getek substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". r ja in range of 20-35 c/w. note 3: device mounted on fra-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout r ja in range of 65c/w. see mounting pad dimensions on page 5. microsemi copyright ? 2005 5/17/2005 rev b page 3
ups1040cte3 10 a dual schottk y barrier rectifiers microsemi copyright ? 2005 5/17/2005 rev b www. microsemi . com tape & reel 16 mm tape 13 inch reel u u p p s s 1 1 0 0 4 4 0 0 c c t t e e 3 3 page 4
ups1040cte3 10 a dual schottk y barrier rectifiers package & pad layout dimensions packaging: www. microsemi . com microsemi copyright ? 2005 5/17/2005 rev b u u p p s s 1 1 0 0 4 4 0 0 c c t t e e 3 3 inches millimeters nominal dim nominal a 0.070 1.778 b 0.173 4.392 c 0.200 5.080 d 0.035 0.889 e 0.160 4.064 f 0.072 1.829 g 0.056 1.422 h 0.044 1.118 j 0.190 4.826 k 0.210 5.344 l 0.038 0.965 m 0.864 0.034 0.030 0.762 n 0.030 p 0.762 page 5
ups1040cte3 10 a dual schottk y barrier rectifiers microsemi copyright ? 2005 5/17/2005 rev b www. microsemi . com u u p p s s 1 1 0 0 4 4 0 0 c c t t e e 3 3 notes: n n o o t t e e s s page 6
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